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Los Alamos National LaboratoryCenter for Integrated Nanotechnologies
Helping you understand, create, and characterize nanomaterials

CINT: Big Science AT THE Nanoscale

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    What is CINT?

    The Center for Integrated Nanotechnologies is a DOE BES national user facility. Join us to explore the range of integration researched at CINT starting at the atomic level.

  • CINT 10 Years of Innovation

    CINT User Meeting

    Save the date for the 2016 CINT User Meeting  and help us celebrate 10 years of Innovation!
    September 19-20, 2016 at the La Fonda hotel in Santa Fe, NM.
    Abstracts and more details »

  • Submit a Proposal Picture

    Submit a Proposal

    We are now accepting Rapid Access proposals only. These should be limited in scope and have time sensitive justification.  The next regular call for proposals will open September 1, 2016.

  • superconductivity

    A Powerful Catalyst for Clean Energy

    Theoretical and experimental methods were used to create different MoS2 structures, a catalyst for artificial photosynthesis and hydrogen (H2) fuel production. Both methods revealed that the octahedral structure (1T′ phase) of MoS2 enhances H2 yields by four-fold compared with other MoS2 structures.

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    Toward a Low-Cost Photovoltaic Material

    Achieved previously elusive alloying of germanium with a high concentration of tin (as high as 42%) at the nanoscale level using a new synthetic approach and tested its light absorption properties.

  • gold nanocluster

    Nanoscaffolds to Enhance Energy-Generating Materials

    Observed an order of magnitude increase in ionic conductivity in a tunable, strained nanocomposite by varying the type of rare-earth (RE) metal-oxides in the nanoscaffold films.

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    Investigating Effective Light-Harvesting at the Atomic Level

    A combined experimental and computational study of energy transfer reveals the relationship between electronic and nuclear forces during light-harvesting processes in dendrimers, a synthetic light-harvesting molecule that can be used in optical-electronic applications.